TO220 Boitier
  • TO220 Boitier
  • TIC226A-TIC226B-TIC226C-TIC226D-TIC226E-TIC226M-TIC226N-TIC226S Structure

TIC226 SERIE

SILICON BIDIRECTIONAL TRIODE THYRISTORS

TIC226A-TIC226B-TIC226C-TIC226D-TIC226E-TIC226M-TIC226N-TIC226S

General Description

This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state to the on-state by either polarity of gate signal with main Terminal 2 at either polarity.

Features

  • 8 A RMS
  • 70 A Peak
  • Glass Passivated Wafer
  • 100 V to 800 V Off-State Voltage
  • Max IGT of 50 mA (Quadrants 1-3)
  • High-temperature, High-current and high-voltage applications
  • Compliance to ROHS
31

Fiche technique

Boitier
TO220

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TIC226 SERIE

TIC226A-TIC226B-TIC226C-TIC226D-TIC226E-TIC226M-TIC226N-TIC226S Datasheet EN

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