HF WIDEBAND TRANSISTORS
The BFW17 is NPN multi-emitter transistor in a TO-39 metal envolope, with the collector connected to the case. The transistor has extremely good intermodulation properties and a high power gain.
It is primarily intended for :
•Final and driver stages of channel - and band aerial amplifiers with high outpout power for bands I , II , III (40-230 MHz).
•Final stage of the wideband vertical amplifier in high speed oscilloscopes.
Compliance to RoHS.